2SK2247
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source On State Resistance
R
DS(on)
(
)
Drain to Source Saturation Voltage
V
DS(on)
(V)
0.5
Pulse Test
Ta = 25 °C
0.4
10
5
2
1
0.5
Static Drain to Source State Resistance
vs. Drain Current
Ta = 25 °C
Pulse Test
0.3
I
D
= 2 A
1A
0.5 A
0
4
8
12
Gate to Source Voltage
16
V
GS
(V)
20
0.2
V
GS
= 4 V
0.2
0.1
0.1
10 V
0.2
0.5
1
Drain Current
2
5
I
D
(A)
10
0.1
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
1.0
Forward Transfer Admittance vs.
Drain Current
10
5
Ta = –25 °C
2
1
0.5
75 °C
25 °C
0.8
0.6
I
D
= 2 A
1A
V
GS
= 4 V
0.5 A
0.5, 1, 2 A
10 V
0.4
0.2
0
–40
0.2
0.1
0.1
V
DS
= 10 V
Pulse Test
0.2
0.5
1
2
5
10
0
40
80
120
160
Case Temperature Tc (°C)
Drain Current I
D
(A)
4
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