2SK2225
5000
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
Reverse Recovery Time trr (ns)
2000
1000
500
Capacitance C (pF)
V
GS
= 0
f = 1 MHz
1000
Ciss
200
100
50
di / dt = 100 A / µs, Ta = 25 °C
V
GS
= 0, Pulse Test
100
Coss
Crss
10
0.05 0.1 0.2
0.5
1
2
Reverse Drain Current I
DR
(A)
5
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
1000
Switching Characteristics
20
1000
500
Switching Time t (ns)
800
V
DD
= 250 V
400 V
600 V
V
DS
16
V
GS
12
t d(off)
200
100
V
GS
= 10 V
PW = 2 µs
duty < 1 %
Drain to Source Voltage
600
Gate to Source Voltage
tf
50
400
8
V
DD
= 250 V
400 V
600 V
tr
t d(on)
200
I
D
= 2.5 A
4
20
10
0
20
40
60
80
Gate Charge Qg (nc)
0
100
0.05 0.1
0.2
0.5
Drain Current
1
2
I
D
(A)
5
5