2SK2212
Body–Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
5000
1000
Ciss
Coss
100
20
10
5
0.2
di / dt = 100 A / µs
V
GS
= 0, Ta = 25 °C
0.5
1
2
5
10 20
Reverse Drain Current I
DR
(A)
10
5
V
GS
= 0
f = 1 MHz
0
10
20
Crss
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
500
20
500
Switching Characteristics
Drain to Source Voltage
300
12
I
D
= 15 A
V
DS
V
DD
= 150 V
100 V
50 V
8
16
24
32
Gate Charge Qg (nc)
Gate to Source Voltage
V
DD
= 50 V
100 V
150 V
V
GS
Switching Time t (ns)
400
16
200
100
50
tr
20
10
5
0.2
t d(off)
tf
t d(on)
200
8
100
4
0
40
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
0.5
1
2
Drain Current
10
I
D
(A)
5
20
0
5
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