2SK2204 L , 2SK2204 S
Body–Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
Capacitance C (pF)
Ciss
2000
Coss
1000
500
20
10
5
0.05 0.1 0.2
0.5
1
2
5
10 20
50
Crss
200
100
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
Reverse Drain Current
I
DR
(A)
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
100
V
DD
= 10 V
25 V
V
GS
I
D
= 45 A
V
DS
20
V
DD
= 10 V
25 V
0
40
80
120
160
Gate Charge Qg (nc)
4
0
200
20
Switching Characteristics
5000
2000
Switching Time t (ns)
1000
500
200
100
50
20
t d(on)
t d(off)
tf
tr
80
16
Drain to Source Voltage
60
12
40
8
Gate to Source Voltage
10 V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
5
0.05 0.1 0.2
0.5 1
2
5
10 20
50
Drain Current
I
D
(A)
5
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