2SK2202
Body–Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Capacitance C (pF)
500
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
200
100
50
20
10
0
10
20
Crss
Coss
V
GS
= 0
f = 1 MHz
Ciss
200
100
50
20
10
0.1
di / dt = 50 A / µs, V
GS
= 0
Ta = 25 °C, Pulse Test
0.2
0.5
1
2
5
10
Reverse Drain Current I
DR
(A)
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
160
I
D
= 7 A
120
V
DS
12
V
DD
= 100 V
50 V
25 V
V
DD
= 100 V
50 V
25 V
8
16
24
32
Gate Charge Qg (nc)
16
V
GS
(V)
200
20
500
200
Switching Time t (ns)
100
50
20
10
5
3
0.1
Switching Characteristics
t d(off)
tf
V
GS
= 10 V
V
DD
= 30 V
PW = 2 µs
duty < 1 %
tr
Drain to Source Voltage
80
8
40
4
0
40
Gate to Source Voltage
t d(on)
0
0.2
0.5
1
Drain Current
2
5
I
D
(A)
10
5
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