2SK2175
Body–Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
Capacitance C (pF)
di dt / = 50 AµS, Ta = 25 °C
V
GS
= 0, Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
1000
500
Ciss
200
100
50
200
100
50
Coss
20
10
5
0.1
Crss
20
10
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
0.2
0.5
1
2
5
10
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
100
V
DD
= 50 V
25 V
10 V
V
DS
V
GS
I
D
= 5 A
20
V
DD
= 10 V
25 V
50 V
4
8
12
16
Gate Charge Qg (nc)
4
0
20
20
Switching Characteristics
500
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
t d(off)
tf
tr
t d(on)
10
5
0.1
Switching Time t (ns)
80
16
200
100
50
Drain to Source Voltage
60
12
40
8
Gate to Source Voltage
20
0
0.2
0.5
1
Drain Current
2
5
I
D
(A)
10
5
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