2SK2121
Body–Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
Typical Capacitance vs.
Drain to Source Voltage
100000
200
100
50
Capacitance C (pF)
10000
Ciss
Coss
1000
20
10
5
0.1
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
Crss
V
GS
= 0
f = 1 MHz
100
0.3
1
3
10
30
100
Reverse Drain Current I
DR
(A)
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
GS
(V)
100
V
DS
(V)
V
GS
V
DD
= 10 V
25 V
50 V
V
DS
40
I
D
= 50 A
8
20
Switching Characteristics
5000
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
Switching Time t (ns)
2000
1000
500
200
100
50
0.1
0.3
tf
t d(off)
80
16
Drain to Source Voltage
60
12
Gate to Source Voltage
tr
t d(on)
1
3
Drain Current
10
30
I
D
(A)
100
20
V
DD
= 10 V
25 V
50 V
80
160
240
320
Gate Charge Qg (nc)
4
0
400
0
5
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