2SK2116, 2SK2117
Table 3 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
2SK2116
Symbol
V
(BR)DSS
Min
450
Typ
Max
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
———————————————————————————————————————————
————
2SK2117
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
2SK2116
V
(BR)GSS
I
GSS
——
500
±30
V
———————————————————————————————————————————
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±25 V, V
DS
= 0
———————————————————————————————————————————
±10
250
µA
µA
———————————————————————————————————————————
————
2SK2117
Gate to source cutoff voltage
V
GS(off)
2.0
4.0
0.6
0.7
6.5
3.0
0.8
0.9
S
I
D
= 4 A
V
DS
= 10 V *
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 4 A
V
GS
= 10 V
R
L
= 7.5
V
I
DSS
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
—————————
———————————————————————————————————————————
———————————————————————————————————————————
Static drain to source 2SK2116 R
DS(on)
on state resistance
————
2SK2117
Forward transfer admittance
|y
fs
|
Ciss
Coss
Crss
t
d(on)
I
D
= 1 mA, VDS = 10 V
I
D
= 4 A, V
GS
= 10 V *
———————————
———————————————————————————————————————————
———————————————————————————————————————————
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on delay time
Rise time
Turn–off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
* Pulse Test
s
See characteristic curve of 2SK1157, 2SK1158.
1050
280
40
15
55
95
40
0.95
pF
pF
pF
ns
ns
ns
ns
V
I
F
= 7 A, V
GS
= 0
IF = 7 A, V
GS
= 0,
diF / dt = 100 A / µs
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
————————————————————————————————
————————————————————————————————
t
f
V
DF
t
rr
t
d(off)
t
r
———————————————————————————————————————————
———————————————————————————————————————————
320
ns
———————————————————————————————————————————
2
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