2SK2085
Body–Drain Diode Reverse
Recovery Time
200
Reverse Recovery Time trr (ns)
Capacitance C (pF)
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
100
Typical Capacitance vs.
Drain to Source Voltage
1000
500
200
100
50
20
10
5
2
1
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
Crss
Coss
Ciss
50
20
10
0.02
0.05 0.1 0.2
0.5
1
2
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
200
20
200
100
Switching Time t (ns)
50
20
10
5
2
0.02
Switching Characteristics
160
V
DD
= 25 V
50 V
80 V
V
DS
V
GS
I
D
= 1 A
16
t d(off)
V
GS
= 10 V
V
DD
= 30 V
PW = 2 µs
duty < 1 %
tf
Drain to Source Voltage
120
8
80
4
Gate to Source Voltage
t d(on)
tr
40
V
DD
= 25 V
50 V
80 V
2
8
6
8
Gate Charge Qg (nc)
2
0
10
0
0.05 0.1 0.2
Drain Current
0.5
I
D
(A)
1
2
5
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