2SK2085
Silicon N Channel MOS FET
Application
TO–92 MOD.
High speed power switching
Features
•
•
•
•
Low on–resistance
High speed switching
Low drive current
4 V gate drive device can be driven from
5 V source
• Suitable for Switching regulator, DC – DC
converter
2
1
1
3
2
3
1. Gate
2. Drain
3. Source
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
100
±20
1.0
4.0
1.0
0.9
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
*
PW
≤
10 µs, duty cycle
≤
1 %
**
Value at Tc = 25 °C
1