2SK2084 L , 2SK2084 S
Body–Drain Diode Reverse
Recovery Time
200
Reverse Recovery Time trr (ns)
Typical Capacitance vs.
Drain to Source Voltage
10000
100
Capacitance C (pF)
1000
Ciss
Coss
50
di / dt = 20 A / µs
V
GS
= 0, Ta = 25 °C
100
Crss
V
GS
= 0
f = 1 MHz
20
10
0.1
10
0.2
0.5
1
2
5
10
Reverse Drain Current I
DR
(A)
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
50
20
200
Switching Characteristics
t d(off)
Switching Time t (ns)
100
tf
V
GS
= 10 V
V
DD
= 20 V
PW = 5 µs
duty < 1 %
tr
t d(on)
40
Drain to Source Voltage
30
V
DS
I
D
= 7 A
8
Gate to Source Voltage
V
DD
= 20 V
10 V
5V
V
GS
16
50
20
4
10
V
DD
= 20 V
10 V
5V
8
16
24
32
Gate Charge Qg (nc)
2
0
40
20
0
10
0.1
0.2
0.5
1
Drain Current
2
5
I
D
(A)
10
5
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