2SK2075
Body–Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
Capacitance C (pF)
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
1000
200
100
50
Coss
100
20
10
di / dt = 100 A / µs
V
GS
= 0, Ta = 25 °C
Crss
V
GS
= 0
f = 1 MHz
5
0.05 0.1 0.2
0.5 10 20
50
Reverse Drain Current I
DR
(A)
10
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
I
D
= 20 A
400
V
DD
= 50 V
100 V
200 V
V
DS
V
GS
(V)
500
V
GS
20
500
Switching Characteristics
t d(off)
Switching Time t (ns)
200
100
50
20
10
5
0.5
1
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
2
5
10 20
Drain Current I
D
(A)
50
tr
t d(on)
tf
16
Drain to Source Voltage
300
8
200
4
100
V
DD
= 200 V
100 V
50 V
20
40
60
80
Gate Charge Qg (nc)
2
0
100
0
Gate to Source Voltage
5
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