2SK1971
Body to Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time t rr (ns)
500
Capacitance C (pF)
Typical Capacitance
vs. Drain to Source Voltage
10000
Ciss
200
100
50
20
10
0.5
di/dt = 100 A/
µ
s, V
GS
= 0
Ta = 25°C
1000
Coss
100
V
GS
= 0
f = 1 MHz
10
Crss
1
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
1000
Drain to Source Voltage V
DS
(V)
800
600
V
DS
400
200
I
D
= 35 A
V
DD
= 400 V
250 V
100 V
Gate to Source Voltage V
GS
(V)
V
GS
20
16
12
8
4
0
160
200
1000
500
Switching Time t (ns)
200
Switching Characteristics
td(off)
tr
tf
100
50
20
10
0.5
td(on)
V
GS
= 10 V, V
DD
= 30 V
:
Pw = 5
µ
s, duty
<
1%
=
1
2
5
10
20
50
V
DD
= 400 V
250 V
100 V
40
80
120
0
Gate Charge Qg (nc)
Drain Current I
D
(A)
5
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