2SK1957
Body to Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time t rr (ns)
200
100
50
20
10
5
0.2
di/dt = 100 A/
µ
s, V
GS
= 0
Ta = 25°C
Typical Capacitance
vs. Drain to Source Voltage
1000
Ciss
Capacitance C (pF)
Coss
100
10
V
GS
= 0
f = 1 MHz
1
Crss
0.5
1
2
5
10
20
0
Reverse Drain Current I
DR
(A)
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
500
400
300
200
100
V
DD
= 150 V
100 V
50 V
I
D
= 7 A
V
DS
V
DD
= 150 V
100 V
50 V
8
16
24
32
Gate Charge Qg (nc)
Gate to Source Voltage V
GS
(V)
V
GS
20
16
12
8
4
0
40
500
Switching Time t (ns)
200
100
50
20
10
5
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
:
PW = 2
µ
s, duty
<
1%
=
td (off)
tf
td (on)
tr
0
0.1 0.2
0.5
1
2
5
10
Drain Current I
D
(A)
5
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