2SK1948
Body to Drain Diode Reverse
Recovery Time
5000
Reverse Recovery Time t rr (ns)
2000
Capacitance C (pF)
1000
500
200
100
50
1
2
5
10
20
50
100
di/dt = 100 A/
µ
s, V
GS
= 0
Ta = 25°C
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
1000
Coss
100
V
GS
= 0
f = 1 MHz
10
0
Crss
Reverse Drain Current I
DR
(A)
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
500
400
300
200
100
V
DD
= 200 V
100 V
50 V
80
160
240
320
Gate Charge Qg (nc)
V
DD
= 200 V
100 V
50 V
I
D
= 50 A
V
DS
Gate to Source Voltage V
GS
(V)
V
GS
20
16
12
8
4
0
400
1000
Switching Characteristics
t
d
(off)
Switching Time t (ns)
500
200
100
50
20
10
0.5
1
2
5
10
20
50
Drain Current I
D
(A)
V
GS
= 10 V, V
DD
= 30 V
:
PW = 5
µ
s duty
≤
1%
t
f
t
r
t
d
(on)
0
5