2SK1947
Body to Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time t rr (ns)
200
100
50
20
10
5
1
2
5
10
20
50
100
Reverse Drain Current I
DR
(A)
10
0
di/dt = 100 A/
µ
s
V
GS
= 0, Ta = 25°C
10000
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Capacitance C (pF)
1000
Coss
100
V
GS
= 0
f = 1 MHz
10
20
Crss
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
Drain to Source Voltage V
DS
(V)
400
300
V
DS
200
100
V
DD
= 200 V
100 V
50 V
80
160
240
320
8
4
0
400
V
DD
= 200 V
100 V
50 V
V
GS
16
12
20
Gate to Source Voltage V
GS
(V)
1000
500
Switching Time t (ns)
200
100
50
20
10
0.5
Switching Characteristics
td(off)
tf
tr
I
D
= 50 A
t d(on)
V
GS
= 10 V, V
DD
= 30 V
:
µ
s, duty
<
1%
PW = 2
=
1
2
5
10
20
50
0
Gate Charge Qg (nc)
Drain Current I
D
(A)
5
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