2SK1934
Body to Drain Diode Reverse
Recovery Time
5000
Typical Capacitance
vs. Drain to Source Voltage
10000
Reverse Recovery Time t rr (ns)
2000
1000
500
200
100
di/dt = 100 A/
µ
s, V
GS
= 0
Ta = 25°C
Capacitance C (pF)
Ciss
1000
Coss
Crss
100
V
GS
= 0 V
f = 1 MHz
50
0.2
0.5 1
2
5
10 20
Reverse Drain Current I
DR
(A)
10
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
1000
Drain to Source Voltage V
DS
(V)
800
600
400
200
V
DD
= 250 V
400 V
600 V
V
DS
I
D
= 8 A
V
GS
20
Gate to Source Voltage V
GS
(V)
16
12
8
4
0
200
Switching Characteristics
500
200
100
50
20
10
5
0.1
V
GS
= 10 V, V
DD
=
.
30 V
:
PW = 5
µ
s, duty
>
1%
=
td(off)
tf
tr
td(on)
V
DD
= 250 V
400 V
600 V
0
40
80
120
160
Gate Charge Qg (nc)
Switching Time t (ns)
0.2
0.5
1
Drain Current
2
5
10
I
D
(A)
5
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