2SK1933
Body to Drain Diode Reverse
Recovery Time
5000
Reverse Recovery Time t rr (ns)
2000
1000
500
200
100
50
0.1
10000
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Capacitance C (pF)
1000
Coss
di/dt = 100 A/
µ
s, V
GS
= 0
Ta = 25°C
100
Crss
V
GS
= 0
f = 1 MHz
10
0.2
0.5
1
2
5
10
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
1000
Drain to Source Voltage V
DS
(V)
800
600
400
200
V
DD
= 250 V
400 V
600 V
V
DS
I
D
= 10 A
Gate to Source Voltage V
GS
(V)
V
GS
20
16
12
8
4
0
160
200
500
200
100
50
20
10
5
0.2
Switching Characteristics
td(off)
tf
tr
td(on)
V
DD
= 250 V
400 V
600 V
40
80
120
Switching Time t (ns)
V
GS
= 10 V, V
DD
= 30 V
:
PW = 5
µ
s, duty
<
1%
=
0.5
1
2
5
10
20
0
Gate Charge Qg (nc)
Drain Current I
D
(A)
5