2SK1910
Body to Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time t rr (ns)
500
200
100
50
20
10
0.5
di/dt = 50 A/
µ
s, V
GS
= 0
Ta = 25°C
Typical Capacitance vs.
Drain to Source Voltage
10000
Capacitance C (pF)
Ciss
1000
Coss
Crss
100
V
GS
= 0
f = 1 MHz
10
10 20
50
5
Reverse Drain Current I
DR
(A)
1
2
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
100
80
V
DD
= 50 V
25 V
60
10 V
V
DS
40
20
I
D
= 25 A
V
DD
= 50 V
25 V
10 V
20
40
60
80
Gate Charge Qg (nc)
Gate to Source Voltage V
GS
(V)
V
GS
20
16
12
8
4
0
100
1000
Switching Time t (ns)
500
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
:
PW = 2
µ
s, duty
<
1%
=
td (off)
200
100
50
20
10
0.5
tr
td (on)
tf
0
1
2
5
10 20
Drain Current I
D
(A)
50
5
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