2SK1880 L , 2SK1880 S
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time t rr (ns)
5000
2000
1000
500
200
100
50
0.1 0.2
1
0.5
1
2
5
10
0
di/dt = 100 A/
µ
s
V
GS
= 0
Ta = 25°C
Pulse Test
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Capacitance C (pF)
100
Coss
10
Crss
V
GS
= 0
f = 1 MHz
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
1000
I
D
= 1.5 A
800
600
400
200
V
DS
V
DD
= 100 V
250 V
400 V
4
8
12
16
V
GS
V
DD
= 100 V
250 V
400 V
16
12
8
4
0
20
20
Switching Characteristics
500
200
100
50
20
10
5
0.1 0.2
t
r
t
f
t
d
(on)
t
d
(off)
V
GS
= 10 V
PW = 2
µ
s
duty
<
1%
=
= 30 V
V
DD
:
0
Switching Time t (ns)
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current I
D
(A)
5
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