2SK1880
L
, 2SK1880
S
Silicon N Channel MOS FET
Application
DPAK–1
High speed power switching
4
4
Features
Low on–resistance
High speed switching
No secondary breakdown
Suitable for Switching regulator
12
3
2, 4
12
1
3
1. Gate
2. Drain
3. Source
4. Drain
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
600
±30
1.5
3.0
1.5
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
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Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
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*
PW
10 µs, duty cycle
1 %
**
Value at Tc = 25 °C
1
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