2SK1862, 2SK1863
Silicon N Channel MOS FET
Application
TO–220FM
High speed power switching
Features
Low on–resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for Switching regulator
2
12
3
1
Table 1 Ordering Information
Type No.
2SK1862
2SK1863
1. Gate
2. Drain
3. Source
3
————————————————————
450 V
500 V
V
DSS
————————————————————
————————————————————
Table 2 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SK1862
Symbol
V
DSS
V
DSS
Ratings
450
Unit
V
———————————————————————————————————————————
—————
2SK1863
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
———
500
±30
3
12
3
25
150
–55 to +150
V
A
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
*
PW
10 µs, duty cycle
1 %
**
Value at Tc = 25 °C
1
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