2SK1838 L , 2SK1838 S
Body-Drain Diode Reverse Recovery
Time
1000
500
1000
Typical Capacitance vs. Drain-Source
Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200
100
50
di / dt = 100 A /
µ
s
V
GS
= 0, Ta = 25°C
20
10
0.05
100
Ciss
Coss
10
Crss
1
0
0.1
0.2
0.5
1
2
5
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Sourve Voltage V
DS
(V)
Dynamic Input Characteristics
500
I
D
= 0.5 A
16
V
GS
300
V
DD
= 200 V
200
V
DS
100 V
50 V
8
12
Gate to Source Voltage V
GS
(V)
400
20
100
50
Switching Characteristics
.
V
GS
= 10 V,V
DD
=
30 V
.
µ
s, duty 1 %
PW = 2
Drain to Source Voltage V
DS
(V)
Switching Time t (ns)
tf
20
10
td (on)
5
tr
2
td (off)
100
V
DD
= 200 V
100 V
50 V
4
0
4
8
12
16
20
0
1
0.05
0.1
0.2
0.5
1
2
5
Gate Charge
Q
g (nc)
Drain Current I
D
(A)
5
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