2SK1838
L
, 2SK1838
S
Silicon N Channel MOS FET
Application
DPAK–1
4
12
3
12
3
4
High speed power switching
Features
S Type
L Type
1. 1. Gate
Gate
2. 2. Drain
Drain
3. 3. Source
Source
4. 4. Drain
Drain
Low on–resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC–DC
converter
2, 4
1
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
*
**
PW
10 µs, duty cycle
1 %
Value at Tc = 25 °C
Symbol
V
DSS
Ratings
250
±30
1
2
1
10
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
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Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
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1
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