2SK1838
L
, 2SK1838
S
Silicon N Channel MOS FET
Application
DPAK–1
4
12
3
12
3
4
High speed power switching
Features
S Type
L Type
1. 1. Gate
Gate
2. 2. Drain
Drain
3. 3. Source
Source
4. 4. Drain
Drain
•
•
•
•
•
Low on–resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC–DC
converter
2, 4
1
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
*
**
PW
≤
10 µs, duty cycle
≤
1 %
Value at Tc = 25 °C
Symbol
V
DSS
Ratings
250
±30
1
2
1
10
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
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Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
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1