2SK1836, 2SK1837
Body-Drain Diode Reverse Recovery
Time
1000
500
Capacitance C (pF)
10000
Typical Capacitance vs.
Drain-Source Voltage
Ciss
Reverse Recovery Time trr (ns)
200
100
50
di / dt = 100 A /
µ
s
V
GS
= 0, Ta = 25°C
1000
Coss
100
V
GS
= 0
f = 1 MHz
10
Crss
20
10
0.5
1
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
V
DD
= 100 V
Drain to Source Voltage V
DS
(V)
400
250 V
400 V
300
V
DS
200
I
D
= 50 A
8
V
GS
12
16
Gate to Source Voltage V
GS
(V)
2000
Switching Time t (ns)
1000
20
5000
Switching Characteristics
.
V
GS
= 10 V,V
DD
=
30 V
.
PW = 2
µ
s, duty 1 %
td (off)
500
tf
200
tr
100
td (on)
100
V
DD
= 400 V
250 V
100 V
4
0
80
160
240
320
0
400
50
0.5
1
2
5
10
20
50
Gate Charge
Q
g (nc)
Drain Current I
D
(A)
5
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