2SK1836, 2SK1837
Silicon N Channel MOS FET
Application
TO–3PL
High speed power switching
Features
Low on–resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC–DC
converter
2
1
1
2
3
Table 1 Ordering Information
3
Type No
2SK1836
2SK1837
1. Gate
2. Drain (Flange)
3. Source
————————————————————
450V
500V
V
DSS
————————————————————
————————————————————
Table 2 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
K1836
Symbol
V
DSS
Ratings
450
Unit
V
———————————————————————————————————————————
—————
K1837
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
*
**
PW
10 µs, duty cycle
1 %
Value at Tc = 25 °C
V
GSS
——————
500
±30
50
200
50
250
150
–55 to +150
V
A
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
1
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