2SK1835
Body-Drain Diode Reverse
Recovery Time
5000
10000
Typical Capacitance vs. Drain-Source
Voltage
Reverse Recovery Time trr (ns)
2000
Capacitance C (pF)
1000
500
1000
Ciss
di / dt = 100 A /
µ
s
V
GS
= 0, Ta = 25°C
Coss
200
100
5
0.1
100
Crss
V
GS
= 0
f = 1 MHz
10
0
0.2
0.5
1
2
5
10
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
Dynamic Input Characteristics
1000
I
D
=4A
Drain to Source Voltage V
DS
(V)
800
V
GS
600
V
DS
V
DD
= 600 V
400
400 V
250 V
200
V
DD
= 600 V
400 V
250 V
0
40
80
120
160
0
200
4
20
8
12
16
Switching Time t (ns)
20
1000
500
Switching Characteristics
td (off)
200
100
50
tr
tf
V
GS
= 10 V, duty
PW = 5
µ
s
0.1
0.2
1%
10
0.05
0.5
1
2
5
Gate Charge
Q
g (nc)
Drain Current I
D
(A)
5