2SK1835
Silicon N Channel MOS FET
Application
High speed power switching
TO–3P
Features
High breakdown voltage (V
DSS
= 1500V)
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator
G
1
2
D
3
1. Gate
2. Drain (Flange)
2. Drain (Flange)
3. Source
3. Source
S
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
*
**
PW
10 µs, duty cycle
1 %
Value at Tc = 25 °C
Symbol
V
DSS
Ratings
1500
±20
4
10
4
125
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
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Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
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1
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