2SK1831, 2SK1832
Table 3 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
K1831
Symbol
V
(BR)DSS
Min
450
500
V
(BR)GSS
I
GSS
I
DSS
±30
Typ
Max
V
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±25 V, V
DS
= 0
Unit
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
———————————————————————————————————————————
————
K1832
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
K1831
———————————
——————————————————————————————————————————--
———————————————————————————————————————————
±10
250
µA
µA
———————————————————————————————————————————
————
K1832
V
GS(off)
2.0
4.0
0.6
0.7
7.0
3.0
0.8
0.9
S
I
D
= 5 A
V
DS
= 10 V *
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 5 A
V
GS
= 10 V
R
L
= 6
V
Gate to source cutoff voltage
——————————
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, VDS = 10 V
V
DS
= 360 V, V
GS
= 0
———————————————————————————————————————————
———————————————————————————————————————————
Static drain to source K1831
R
DS(on)
on state resistance ————
K1832
Forward transfer admittance
|y
fs
|
Ciss
Coss
Crss
t
d(on)
I
D
= 5 A
V
GS
= 10 V *
———————————
———————————————————————————————————————————
———————————————————————————————————————————
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on delay time
Rise time
Turn–off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
* Pulse Test
1050
280
40
15
60
90
45
1.0
pF
pF
pF
ns
ns
ns
ns
V
I
F
= 10 A, V
GS
= 0
I
F
= 10 A, V
GS
= 0,
di
F
/ dt = 100 A / µs
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
————————————————————————————————
————————————————————————————————
t
f
V
DF
t
rr
t
d(off)
t
r
———————————————————————————————————————————
———————————————————————————————————————————
350
ns
———————————————————————————————————————————
See characteristic curves of 2SK1157, 2SK1158
2
Home Index Bookmark Pages Text
Previous Next
Pages: Home Index