2SK1773
Body-Drain Diode Reverse Recovery
Time
5000
10000
Typical Capacitance vs. Drain-
Source Voltage
Reverse Recovery Time trr (ns)
2000
Capacitance C (pf)
1000
1000
Ciss
500
di / dt = 100 A /
µ
s
V
GS
= 0, Ta =25°C
Coss
100
Crss
200
100
50
0.1
V
GS
= 0
f = 1 MHz
10
0
0.2
0.5
1
2
5
10
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
1000
20
500
Switching Characteristics
td (off)
Drain to Source Voltage V
DS
(V)
V
GS
V
DS
V
DD
= 250 V
400 V
I
D
= 5 A
12
Gate to Source Voltage V
GS
(V)
800
16
200
Switing Time t (ns)
tf
100
tr
50
td (on)
20
10
.
V
GS
= 10 V, V
DD
=
30 V
.
PW = 2
µ
s, duty < 1%
600
400
600 V
V
DD
= 600 V
400 V
250 V
0
40
80
120
160
8
200
4
0
200
5
0.1
0.2
0.5
1
2
5
10
Gate Charge
Q
g (nc)
Drain Current I
D
(A)
5