2SK1772
Body-Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time t rr (ns)
di/dt = 50 A/µs
V
GS
= 0
200 Ta = 25°C
100
50
1000
Typical Capacitance vs. Drain to
Source Voltage
(pF)
Capacitance
C
100
Ciss
Coss
Crss
20
10
5
0.02
0.05 0.1 0.2
0.5 1.0 2.0
Reverse Drain Current I
DR
(A)
10
V
GS
= 0
f = 1 MHz
10
20
30
Drain to Source Voltage
40
V
DS
(V)
50
1
0
Dynamic Input Characteristics
50
V
DS
(V)
I
D
= 1 A
V
GS
V
DD
= 5 V
10 V
20 V
V
DS
16
20
Gate to Source Voltage V
GS
(V)
Switching Characteristics
500
200
100
50
tf
td(off)
V
GS
= 10 V
V
DD
= 30 V
PW = 2 µs
duty
1 %
Drain to Source Voltage
30
12
20
8
Switching Time
t (ns)
40
20
tr
10
5
0.02
td(on)
10
0
V
DD
= 5 V
10V
20 V
0.8
1.6
2.4
Gate Charge Qg
4
0
4.0
3.2
(nc)
0.05 0.1 0.2
0.5 1.0
Drain Current I
D
(A)
2.0
5
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