2SK1764
Silicon N Channel MOS FET
Application
Low frequency amplifier
High speed switching
UPAK
3
2
1
Features
• Low on–resistance
• High speed switching
• 4 V Gate drive device can be driven from 5 V
source
• Suitable for switchingregulator, DC–DC
converter
2, 4
1
4
1.
1. Gate
Gate
2. Drain
2. Drain
3. Source
3. Source
4. Drain
4. Drain
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel power dissipation
Channel temperature
Storage temperature
*
**
***
Symbol
V
DSS
Ratings
60
±20
±2
±4
1
150
–55 to +150
Unit
V
V
A
A
W
°C
°C
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Pch**
Tch
Tstg
I
D(pulse)
*
I
D
V
GSS
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PW
≤
100 µs, duty cycle
≤
10 %
Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Marking is "KY".
1