2SK1761
Body-Drain Diode Reverse
Recovery Time
500
di / dt = 100 A /
µ
s
V
GS
= 0, Ta = 25°C
Reverse Recovery Time trr (ns)
200
Capacitance C (pF)
10000
Typical Capacitance vs.
Drain-Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
1000
100
50
Coss
20
10
5
0.2
100
Crss
10
0
0.5
1
2
5
10
20
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
Drain to Source Voltage V
DS
(V)
I
D
= 12 A
400
V
GS
300
V
DS
200
V
DD
= 200 V
100 V
50 V
12
16
20
500
Switching Characteristics
.
V
GS
= 10 V,V
DD
=
30 V
.
PW = 2
µ
s, duty 1 %
Gate to Source Voltage V
GS
(V)
200
Switching Time t (ns)
td (off)
100
50
tr
20
10
tf
td (on)
8
100
V
DD
= 200 V
100 V
50 V
4
0
0
8
16
24
32
40
Gate Charge
Q
g (nc)
0
5
0.1
0.2
0.5
1
2
5
10
Drain Current I
D
(A)
5
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