2SK1761
Silicon N Channel MOS FET
Application
TO–220AB
High speed power switching
Features
•
•
•
•
•
Low on–resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC–DC
converter
12
2
3
1.1. Gate
Gate
2.2. Drain (Flange)
Drain (Flange)
3. Source
3. Source
1
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
*
**
PW
≤
10 µs, duty cycle
≤
1 %
Value at Tc = 25 °C
Symbol
V
DSS
Ratings
250
±30
12
48
12
75
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
1