2SK1698
Silicon N Channel MOS FET
Application
UPAK
High speed power switching
Features
3
•
•
•
•
Low on–resistance
High speed switching
Low drive current
4 V gate drive device - - - can be driven from
5 V source.
• Suitable for DC – DC converter, motor drive,
power switch, solenoid drive
2
1
4
2, 4
1
1. Gate
2. Drain
3. Source
4. Drain
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
*
**
***
Symbol
V
DSS
Ratings
100
±20
0.3
1.2
0.3
1
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
PW
≤
10 µs, duty cycle
≤
1 %
When using the alumina ceramic board (12.5
×
20
×
0.7mm)
Marking is "FY".
1