2SK1667
Body-Drain Diode Reverse
Recovery Time
500
1000
Typical Capacitance vs.
Drain-Source Voltage
Ciss
Reverse Recovery Time trr (ns)
200
Capacitance C (pF)
Coss
100
100
50
Crss
10
V
GS
= 0
f = 1 MHz
1
0
20
10
5
0.2
di / dt = 100 A /
µ
s
V
GS
= 0, Ta = 25°C
0.5
1
2
5
10
20
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
I
D
= 7 A
Drain to Source Voltage V
DS
(V)
Switching Time t (ns)
V
GS
300
200 V
200
V
DS
100 V
V
DD
= 50 V
V
DD
= 200 V
100 V
50 V
0
8
16
24
32
0
40
5
0.1
8
12
Gate to Source Voltage V
GS
(V)
400
16
200
100
50
20
500
Switching Characteristics
.
V
GS
= 10 V, V
DD
=
30 V
.
PW = 2
µ
s, duty 1 %
td (off)
tf
20
10
tr
td (on)
100
4
0.2
0.5
1
2
5
10
Gate Charge
Q
g (nc)
Drain Current I
D
(A)
5