2SK1304
Body to Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time t
rr
(ns)
200
100
50
20
10
5
0.5
10
1.0
10
2
5
20
Reverse Drain Current I
DR
(A)
50
0
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Capacitance C (pF)
1,000
Coss
Crss
100
V
GS
= 0
f = 1 MHz
10
30
40
20
Drain to Source Voltage V
DS
(V)
50
Dynamic Input Characteristics
100
Drain to Source Voltage V
DS
(V)
V
DS
V
DD
= 25 V
50 V
80 V
60
V
DD
= 80 V
50 V
25 V
20
I
D
= 40 A
4
V
GS
12
20
Gate to Source Voltage V
GS
(V)
1,000
Switching Characteristics
t
d (off)
500
Switching Time t (ns)
t
f
200
100
50
t
d (on)
20
10
0.5
V
GS
= 10 V
PW = 2
µs,
duty < 1%
1.0
2
5
20
10
Drain Current I
D
(A)
50
t
r
80
16
40
8
0
0
40
120
160
80
Gate Charge Qg (nc)
200
5
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