2SK1303
Body to Drain Diode Reverse
Recovery Time
5,000
Reverse Recovery Time t
rr
(ns)
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10,000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Capacitance C (pF)
Ciss
1,000
Coss
2,000
1,000
500
Crss
100
200
100
50
0.5
1.0
10
20
2
5
Reverse Drain Current I
DR
(A)
50
10
0
10
30
40
20
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
100
Drain to Source Voltage V
DS
(V)
V
DD
= 25 V
50 V
80 V
60
V
DD
= 80 V
V
GS
12
20
Gate to Source Voltage V
GS
(V)
1,000
500
Switching Time t (ns)
Switching Characteristics
t
d (off)
80
V
DS
16
200
100
50
t
r
t
f
40
8
20
50 V
25 V
I
D
= 30 A
4
.
V
GS
= 10 V, V
DD
= 30 V
.
PW = 2
µs,
duty < 1%
t
d (on)
20
10
0.5
0
0
20
40
60
80
Gate Charge Qg (nc)
100
1.0
10
2
5
20
Drain Current I
D
(A)
50
5
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