2SK1299 L , 2SK1299 S
Body to Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
200
Capacitance C (pF)
100
50
100
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
10
V
GS
= 0
f = 1 MHz
1
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
20
10
5
0.1
di/dt = 50 A/µs
V
GS
= 0, Ta = 25°C
Pulse Test
1
0.5
2
5
Reverse Drain Current I
DR
(A)
0.2
10
Dynamic Input Characteristics
200
Drain to Source Voltage V
DS
(V)
160
V
DD
= 80 V
50 V
25 V
V
GS
V
DS
20
Gate to Source Voltage V
GS
(V)
16
500
Switching Characteristics
Switching Time t (ns)
200
100
50
t
f
t
r
20
10
t
d (on)
5
0.1
0.2
t
d (off)
120
12
80
40
8
4
V
DD
= 25 V
50 V
80 V
8
I
D
= 3 A
V
GS
= 10 V, V
DD
=
30 V
.
PW = 2µs, duty < 0.1 %
0.5
5
10
.
0
12
16
20
Gate Charge Qg (nc)
0
24
1
2
Drain Current I
D
(A)
5
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