2SK1298
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
Min
60
Typ
Max
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
———————————————————————————————————————————
———————————————————————————————————————————
±20
V
———————————————————————————————————————————
±10
250
µA
µA
———————————————————————————————————————————
I
DSS
V
GS(off)
———————————————————————————————————————————
1.0
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
* Pulse Test
See characteristic curves of 2SK1297.
|y
fs
|
22
0.015
0.02
35
3600
1850
450
30
170
700
350
1.2
2.0
0.018
0.025
S
pF
pF
pF
ns
ns
ns
ns
V
I
F
= 40 A, V
GS
= 0
I
F
= 40 A, V
GS
= 0,
di
F
/dt = 50 A/µs
I
D
= 20 A, V
GS
= 10 V,
R
L
= 1.5
V
———————————————————————————————————————————
R
DS(on)
———————————
I
D
= 20 A, V
GS
= 10 V *
I
D
= 20 A, V
GS
= 4 V *
——————————–
———————————————————————————————————————————
———————————————————————————————————————————
Ciss
Coss
Crss
t
d(on)
t
r
I
D
= 20 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
V
DF
t
rr
t
f
t
d(off)
———————————————————————————————————————————
155
ns
———————————————————————————————————————————
2
Home Index Bookmark Pages Text
Previous Next
Pages: Home Index