2SK1297
Body to Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time trr (ns)
10000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
200
Capacitance C (pF)
100
50
20
10
5
0.5
1000
Coss
Crss
100
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10
2
1.0
5
10
20
Reverse Drain Current I
DR
(A)
50
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
100
Drain to Source Voltage V
DS
(V)
80
20
Gate to Source Voltage V
GS
(V)
16
1000
Switching Characteristics
t
d (off)
Switching Time t (ns)
500
200
100
50
t
d (on)
20
10
0.5
V
GS
= 10 V
PW = 2µs, duty < 1 %
1.0
5
10
20
Drain Current I
D
(A)
2
50
t
r
t
f
60
V
DD
= 10 V
25 V
50 V
V
DS
V
GS
50 V
12
40
20
8
4
25 V
V
DD
= 10 V
0
40
80
I
D
= 40 A
160
Gate Charge Qg (nc)
120
0
200
5
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