2SK1296
Body to Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
Capacitance C (pF)
1000
Coss
500
200
100
50
Crss
100
20
10
0.5
10
2
1.0
5
10
20
Reverse Drain Current I
DR
(A)
50
0
30
40
50
Drain to Source Voltage V
DS
(V)
10
20
Dynamic Input Characteristics
100
Drain to Source Voltage V
DS
(V)
80
V
DD
= 100 V
25 V
50 V
V
GS
20
Gate to Source Voltage V
GS
(V)
16
500
Switching Characteristics
t
d (off)
200
Switching Time t (ns)
100
50
t
d (on)
V
GS
= 10 V
PW = 2
µs,
duty < 1 %
1.0
5
10
20
Drain Current I
D
(A)
2
50
t
f
t
r
60
V
DS
40
20
12
8
4
I
D
= 30 A
0
200
20
10
5
0.5
V
DD
= 50 V
25 V
10 V
0
40
80
120
160
Gate Charge Qg (nc)
5
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