2SK1296
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
Min
60
Typ
Max
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
———————————————————————————————————————————
———————————————————————————————————————————
±20
V
———————————————————————————————————————————
1.0
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
* Pulse Test
|y
fs
|
17
0.024
0.030
27
2250
1230
300
20
125
390
225
1.3
±10
250
2.0
0.028
0.040
S
pF
pF
pF
ns
ns
ns
ns
V
I
F
= 30 A, V
GS
= 0
I
F
= 30 A, V
GS
= 0,
di
F
/dt = 50 A/µs
I
D
= 15 A, V
GS
= 10 V,
R
L
= 2
µA
µA
V
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
R
DS(on)
V
GS(off)
I
D
= 1 mA, V
DS
= 10 V
I
D
= 15 A, V
GS
= 10 V *
I
D
= 15 A, V
GS
= 4 V *
———————————
——————————–
———————————————————————————————————————————
———————————————————————————————————————————
Ciss
Coss
Crss
t
d(on)
t
r
I
D
= 15 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
V
DF
t
rr
t
f
t
d(off)
———————————————————————————————————————————
160
ns
———————————————————————————————————————————
2
Home Index Bookmark Pages Text
Previous Next
Pages: Home Index