2SK1254 L , 2SK1254 S
Body to Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time t
rr
(ns)
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
1,000
Typical Capacitance
vs. Drain to Source Voltage
Ciss
Capacitance C (pF)
Coss
200
100
50
100
Crss
10
V
GS
= 0
f = 1 MHz
1
20
10
5
0.1
0.2
0.5 1.0
2
5
Reverse Drain Current I
DR
(A)
10
0
10
20
30
40
Drain to Source Voltage V
DS
(V)
50
Dynamic Input Characteristics
100
Drain to Source Voltage V
DS
(V)
V
DD
= 25 V
50 V
80 V
20
Gate to Source Voltage V
GS
(V)
500
Switching Characteristics
V
GS
= 10 V
PW = 2µs, duty
<
1 %
Switching Time t (ns)
80
V
DS
16
200
100
50
t
d (off)
60
V
GS
12
40
V
DD
= 80 V
50 V
25 V
8
I
D
= 3 A
8
t
f
20
10
20
4
t
r
t
d (on)
0
16
24
32
Gate Charge Qg (nc)
0
40
5
1.0
0.2
0.5 1.0
2
Drain Current I
D
(A)
5
10
5
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