2SK1169, 2SK1170
Body to Drain Diode Reverse
Recovery Time
5,000
Reverse Recovery Time t
rr
(ns)
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10,000
Typical Capacitance
vs. Drain to Source Voltage
V
GS
= 0
f = 1 MHz
2,000
1,000
500
Ciss
Capacitance C (pF)
1,000
Coss
200
100
50
0.5
100
Crss
10
1.0
2
5
10
20
Reverse Drain Current I
DR
(A)
50
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
Drain to Source Voltage V
DS
(V)
V
DD
= 100 V
250 V
400 V
300
V
DS
12
V
GS
8
V
DD
= 400 V
250 V
100 V
I
D
= 20 A
20
Gate to Source Voltage V
GS
(V)
500
Switching Characteristics
Switching Time t (ns)
400
16
200
100
50
t
f
t
r
t
d (off)
200
t
d (on)
20
10
5
0.5
V
GS
= 10 V
PW = 2
µs,
duty < 1%
100
4
0
40
80
120
160
Gate Charge Qg (nc)
0
200
1.0
2
5
10
20
Drain Current I
D
(A)
50
5