2SK1169, 2SK1170
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
2SK1169
Symbol
V
(BR)DSS
Min
450
Typ
—
Max
—
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
———————————————————————————————————————————
————
2SK1170
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
2SK1169
V
(BR)GSS
I
GSS
——
500
±30
—
—
V
———————————————————————————————————————————
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±25 V, V
DS
= 0
———————————————————————————————————————————
—
—
—
—
±10
250
µA
µA
———————————————————————————————————————————
————
2SK1170
Gate to source cutoff voltage
Static Drain to
source on state
resistance
2SK1169
V
GS(off)
2.0
—
—
|y
fs
|
10
—
—
—
—
—
—
—
—
—
0.20
0.22
16
2800
780
90
32
115
200
90
1.0
3.0
0.25
0.27
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
V
I
F
= 20 A, V
GS
= 0
I
F
= 20 A, V
GS
= 0,
di
F
/dt = 100 A/µs
I
D
= 10 A, V
GS
= 10 V,
R
L
= 3
Ω
I
D
= 10 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
Ω
I
DSS
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
——————————–
———————————————————————————————————————————
———————————————————————————————————————————
————
2SK1170
R
DS(on)
I
D
= 1 mA, V
DS
= 10 V
I
D
= 10 A, V
GS
= 10 V *
——————————
———————————————————————————————————————————
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
* Pulse Test
———————————————————————————————————————————
Ciss
Coss
Crss
t
d(on)
t
r
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
V
DF
t
rr
t
f
t
d(off)
———————————————————————————————————————————
—
500
—
ns
———————————————————————————————————————————
2