2SK1167, 2SK1168
Body to Drain Diode Reverse
Recovery Time
5,000
Reverse Recovery Time t
rr
(ns)
2,000
1,000
500
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10,000
Typical Capacitance
vs. Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Capacitance C (pF)
Ciss
1,000
Coss
200
100
50
0.2
100
Crss
10
0.5 1.0
2
5
10
Reverse Drain Current I
DR
(A)
20
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
500
Drain to Source Voltage V
DS
(V)
V
DD
= 100 V
400
V
DS
300
250 V
400 V
V
GS
12
16
20
Gate to Source Voltage V
GS
(V)
1,000
500
Switching Time t (ns)
200
100
50
Switching Characteristics
V
GS
= 10 V, V
DD
30 V
PW = 2
µs,
duty < 1%
t
d (off)
t
r
t
f
200
100
V
DD
= 400 V
250 V
100 V
I
D
= 15 A
8
4
t
d (on)
20
10
0.5
0
20
40
60
80
Gate Charge Qg (nc)
0
100
1.0
2
5
10
20
Drain Current I
D
(A)
50
5
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