2SK1165, 2SK1166
Silicon N-Channel MOS FET
Application
TO–3P
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC
converter
2
1
2
3
1
1. Gate
2. Drain
(Flange)
3. Source
3
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SK1165
Symbol
V
DSS
Ratings
450
Unit
V
———————————————————————————————————————————
—————
2SK1166
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
V
GSS
———
500
±30
12
48
12
100
150
–55 to +150
V
A
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
*
PW
≤
10 µs, duty cycle
≤
1 %
**
Value at T
C
= 25 °C
1