2SK1159, 2SK1160
Body to Drain Diode Reverse
Recovery Time
5,000
Reverse Recovery Time t
rr
(ns)
2,000
1,000
500
200
100
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10,000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Capacitance C (pF)
Ciss
1,000
Coss
100
Crss
50
0.2
0.5 1.0
2
10
5
Reverse Drain Current I
DR
(A)
20
10
0
20
10
30
40
Drain to Source Voltage V
DS
(V)
50
Dynamic Input Characteristics
500
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
V
DD
= 100 V
250 V
400 V
V
DS
300
12
20
500
Switching Characteristics
V
GS
= 10 V,
PW = 2
µs,
duty < 1%
Switching Time t (ns)
200
t
d (off)
100
50
t
r
20
10
5
0.2
t
f
t
d (on)
400
V
GS
16
200
V
DD
= 400 V
250 V
100 V
8
100
I
D
= 8 A
4
0
0
20
60
80
40
Gate Charge Qg (nc)
100
0.5
2
1.0
5
Drain Current I
D
(A)
10
20
5
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