2SK1157, 2SK1158
Body to Drain Diode Reverse
Recovery Time
5,000
Reverse Recovery Time t
rr
(ns)
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
5,000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
2,000
1,000
500
200
100
50
0.2
Capacitance C (pF)
1,000
Ciss
Coss
100
10
5
0.5 1.0
2
10
5
Reverse Drain Current I
DR
(A)
20
0
Crss
20
10
30
40
Drain to Source Voltage V
DS
(V)
50
Dynamic Input Characteristics
500
Drain to Source Voltage V
DS
(V)
20
Gate to Source Voltage V
GS
(V)
500
Switching Characteristics
V
GS
= 10 V
PW = 2
µs,
duty < 1%
Switching Time t (ns)
200
t
d (off)
100
50
t
r
t
f
t
d (on)
400
V
DS
300
V
DD
= 100 V
250 V
400 V
V
GS
16
12
200
I
D
= 7 A
100
V
DD
= 400 V
250 V
100 V
8
24
32
16
Gate Charge Qg (nc)
40
8
20
10
5
0.2
4
0
0
0.5
1.0
2
5
Drain Current I
D
(A)
10
20
5